IMPREGNATED SEMICONDUCTOR SCINTILLATOR
نویسندگان
چکیده
منابع مشابه
Impregnated Semiconductor Scintillator
A semiconductor scintillation-type gamma radiation detector is discussed in which the gamma-ray absorbing semiconductor body is impregnated with multiple small direct-gap semiconductor inclusions of bandgap slightly narrower than that of the body. If the typical distance between them is smaller than the diffusion length of carriers in the body material, the photo-generated electrons and holes w...
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Direct-bandgap semiconductor with high quantum radiative efficiency can operate as a scintillator despite being ‘‘opaque’’ to its own luminescence. An interband absorption does not finish off the luminescence but merely creates a new minority carrier, which in turn recombines in a predominately radiative fashion. To take full advantage of this ‘‘photon recycling’’ effect, optically-tight integr...
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High radiative efficiency in moderately doped n-InP results in the transport of holes dominated by photon-assisted hopping, when radiative hole recombination at one spot produces a photon, whose interband absorption generates another hole, possibly far away. Due to “heavy tails” in the hop probability, this is a random walk with divergent diffusivity (process known as the Lévy flight). Our key ...
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There are two large groups of solid-state radiation detectors, which dominate the area of ionizing radiation measurements, scintillation detectors and semiconductor diodes. The scintillators detect high-energy radiation through generation of light which is subsequently registered by a photo-detector that converts light into an electrical signal. Semiconductor diodes employ reverse biased p-n ju...
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ژورنال
عنوان ژورنال: International Journal of High Speed Electronics and Systems
سال: 2008
ISSN: 0129-1564,1793-6438
DOI: 10.1142/s0129156408005928