IMPREGNATED SEMICONDUCTOR SCINTILLATOR

نویسندگان

چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Impregnated Semiconductor Scintillator

A semiconductor scintillation-type gamma radiation detector is discussed in which the gamma-ray absorbing semiconductor body is impregnated with multiple small direct-gap semiconductor inclusions of bandgap slightly narrower than that of the body. If the typical distance between them is smaller than the diffusion length of carriers in the body material, the photo-generated electrons and holes w...

متن کامل

Semiconductor scintillator based on photon recycling

Direct-bandgap semiconductor with high quantum radiative efficiency can operate as a scintillator despite being ‘‘opaque’’ to its own luminescence. An interband absorption does not finish off the luminescence but merely creates a new minority carrier, which in turn recombines in a predominately radiative fashion. To take full advantage of this ‘‘photon recycling’’ effect, optically-tight integr...

متن کامل

LÉVY FLIGHT OF HOLES IN InP SEMICONDUCTOR SCINTILLATOR

High radiative efficiency in moderately doped n-InP results in the transport of holes dominated by photon-assisted hopping, when radiative hole recombination at one spot produces a photon, whose interband absorption generates another hole, possibly far away. Due to “heavy tails” in the hop probability, this is a random walk with divergent diffusivity (process known as the Lévy flight). Our key ...

متن کامل

Semiconductor Scintillator for 3-Dimensional Array of Radiation Detectors

There are two large groups of solid-state radiation detectors, which dominate the area of ionizing radiation measurements, scintillation detectors and semiconductor diodes. The scintillators detect high-energy radiation through generation of light which is subsequently registered by a photo-detector that converts light into an electrical signal. Semiconductor diodes employ reverse biased p-n ju...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: International Journal of High Speed Electronics and Systems

سال: 2008

ISSN: 0129-1564,1793-6438

DOI: 10.1142/s0129156408005928